2SK1527-E datasheet(3/7 Pages) RENESAS

部件名	2SK1527-E

功能描述	Silicon N Channel MOS FET

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制造商	RENESAS [Renesas Technology Corp]

网页	http://www.renesas.com

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3 / 7 page

2SK1526, 2SK1527

Rev.2.00 Sep 07, 2005 page 3 of 6

Main Characteristics

300

200

100

0

50

100

150

Ambient Temperature Ta (

°C)

Power vs. Temperature Derating

1,000

100

3

0.1

10

100

1,000

Drain to Source Voltage VDS (V)

Maximum Safe Operation Area

300

0.3

1

3

30

300

Ta = 25

°C

10

µs

100

µs

DC

Operat

ion

(T

C = 25

°C)

1 ms

PW

=

10

ms

(1

Shot)

30

10

1

Operation

in

this

area

is limited

by

R DS

(on)

2SK1526

2SK1527

50

820

Drain to Source Voltage VDS (V)

Typical Output Characteristics

40

10

412

16

Pulse Test

0

20

30

4.5 V

VGS = 4 V

10 V

6 V

5 V

50

4

10

Gate to Source Voltage VGS (V)

Typical Transfer Characteristics

40

10

26

8

–25

°C

0

20

30

VDS = 10 V

Pulse Test

25

°C

Ta = 75

°C

10

410

Gate to Source Voltage VGS (V)

8

2

26

8

0

4

6

Drain to Source Saturation Voltage

vs. Gate to Source Voltage

20 A

ID = 50 A

Pulse Test

10 A

5

10

200

Drain Current ID (A)

2

0.1

5

20

100

2

0.5

1

Static Drain to Source on State

Resistance vs. Drain Current

0.2

0.05

50

VGS = 10 V, 15 V

Pulse Test

类似零件编号 - 2SK1527-E

制造商	部件名	数据表	功能描述
Renesas Technology Corp	2SK1527-E1-E	247Kb / 8P	500V - 40A - MOS FET High Speed Power Switching Feb.4.2022
	2SK1527-E1-ET2	247Kb / 8P	500V - 40A - MOS FET High Speed Power Switching Feb.4.2022
	2SK1527-E1-E	95Kb / 7P	l500V - 40A - MOS FET High Speed Power Switching

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