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2SK1402-E 数据表(PDF) 4 Page - Renesas Technology Corp |
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2SK1402-E 数据表(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page 2SK1402, 2SK1402A Rev.2.00 Sep 07, 2005 page 4 of 6 10 40 160 Case Temperature TC (°C) 8 2 0 80 120 0 4 6 Static Drain to Source on State Resistance vs. Temperature –40 VGS = 10 V Pulse Test ID = 5 A 2 A 1 A 10 0.1 2 Drain Current ID (A) 2 0.2 0.2 1 1 0.5 0.05 0.5 Forward Transfer Admittance vs. Drain Current 5 VDS = 20 V Pulse Test 75 °C TC = –25°C 5 25 °C 0.1 1,000 0.1 2 Reverse Drain Current IDR (A) 500 20 0.2 1 0.05 100 200 10 0.5 Body to Drain Diode Reverse Recovery Time di/dt = 100 A/ µs, V GS = 0 Ta = 25 °C 50 5 100 20 50 Drain to Source Voltage VDS (V) 10 30 40 Typical Capacitance vs. Drain to Source Voltage 0 10 VGS = 0 f = 1 MHz Crss Coss Ciss 1,000 0 1,000 16 40 Dynamic Input Characteristics 800 200 824 32 0 400 600 20 16 4 0 8 12 0 250 V 400 V VDD = 100 V VGS VDS VDD = 400 V 250 V 100 V ID = 4 A Gate Charge Qg (nc) 500 Reverse Drain Current ID (A) 200 5 50 100 0.1 10 Switching Characteristics td (off) 0.5 1 0.2 2 10 tf tr td (on) 20 VGS = 10 V, PW = 2 µs duty 1%, VDD 30 V 5 < = = . . |
类似零件编号 - 2SK1402-E |
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类似说明 - 2SK1402-E |
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