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2SK1317-E 数据表(PDF) 4 Page - Renesas Technology Corp |
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2SK1317-E 数据表(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page 2SK1317 Rev.2.00 Sep 07, 2005 page 4 of 6 20 40 160 Case Temperature TC (°C) 16 4 0 80 120 0 8 12 Static Drain to Source on State Resistance vs. Temperature ID = 2 A VGS = 15 V Pulse Test –40 0.5 A, 1 A 10 0.1 5 Drain Current ID (A) 5 0.5 0.05 0.2 1.0 0.1 1.0 2 Forward Transfer Admittance vs. Drain Current VDS = 20 V Pulse Test 0.2 0.5 2 75 °C –25 °C Ta = 25 °C 5,000 0.1 5 Reverse Drain Current IDR (A) 2,000 200 0.05 0.2 1.0 50 500 1,000 Body to Drain Diode Reverse Recovery Time di/dt = 100 A/ µs, Ta = 25°C VGS = 0 Pulse Test 100 0.5 2 10,000 20 50 Drain to Source Voltage VDS (V) 100 10 30 40 Typical Capacitance vs. Drain to Source Voltage 0 10 Crss Coss Ciss VGS = 0 f = 1 MHz 1,000 1,000 40 100 Gate Charge Qg (nc) 800 20 60 080 600 400 200 VDD = 600 V VDS Dynamic Input Characteristics 400 V 250 V VDD = 250 V 400 V 600 V VGS 20 16 12 8 4 0 ID = 2.5 A 1,000 0.2 5 Drain Current ID (A) 500 50 0.1 0.5 2 10 100 200 0.05 20 1.0 Switching Characteristics tf td (off) tr VGS = 10 V VDD = 30 V PW = 2 µs, duty < 1% td (on) • • |
类似零件编号 - 2SK1317-E |
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类似说明 - 2SK1317-E |
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