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2SK1254L-E 数据表(PDF) 4 Page - Renesas Technology Corp |
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2SK1254L-E 数据表(HTML) 4 Page - Renesas Technology Corp |
4 / 8 page 2SK1254(L), 2SK1254(S) Rev.2.00 Sep 07, 2005 page 4 of 7 1.0 0.8 0.6 0.4 0.2 0 0 40 80 120 160 Case Temperature TC (°C) –40 Static Drain to Source on State Resistance vs. Temperature Pulse Test 1, 2 A ID = 3 A 3 A 1, 2 A VGS = 4 V VGS = 10 V Forward Transfer Admittance vs. Drain Current 10 5 2 1.0 0.1 0.2 5 0.2 0.5 0.5 Drain Current ID (A) 1.0 2 0.05 0.1 –25 °C TC = 25°C 75 °C VDS = 10 V Pulse Test Body to Drain Diode Reverse Recovery Time Reverse Drain Current IDR (A) 500 200 50 20 10 5 100 0.1 0.2 0.5 1.0 2 5 10 di/dt = 50 A/ µs, Ta = 25°C VGS = 0 Pulse Test Typical Capacitance vs. Drain to Source Voltage 1,000 100 10 1 010 20 30 40 50 Drain to Source Voltage VDS (V) VGS = 0 f = 1 MHz Coss Ciss Crss Dynamic Input Characteristics 100 80 60 40 20 0 816 24 32 40 Gate Charge Qg (nc) 20 16 12 8 4 0 50 V VDD = 25 V VDS ID = 3 A VGS VDD = 80 V 50 V 80 V 25 V Switching Characteristics 500 100 50 20 10 5 200 1.0 0.2 0.5 1.0 2 10 Drain Current ID (A) 5 tr tf td (off) td (on) < VGS = 10 V VDD = 30 V PW = 2 µs, duty 1 % • • |
类似零件编号 - 2SK1254L-E |
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类似说明 - 2SK1254L-E |
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