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2SK1165-E 数据表(PDF) 3 Page - Renesas Technology Corp |
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2SK1165-E 数据表(HTML) 3 Page - Renesas Technology Corp |
3 / 7 page 2SK1165, 2SK1166 Rev.2.00 Sep 07, 2005 page 3 of 6 Main Characteristics 120 80 40 0 50 100 150 Case Temperature TC (°C) Power vs. Temperature Derating 100 10 1.0 0.1 10 100 1,000 Drain to Source Voltage VDS (V) Maximum Safe Operation Area 30 3 0.3 1 3 30 300 Ta = 25 °C 2SK1166 2SK1165 10 µs 100 µs 1 ms DC Operatio n (T C = 25 °C) PW = 10 ms (1 shot) 20 20 50 Drain to Source Voltage VDS (V) Typical Output Characteristics 16 4 10 30 40 0 8 12 5.0 V 4.5 V VGS = 4 V 5.5 V 6 V 10 V 8 V 20 410 Gate to Source Voltage VGS (V) Typical Transfer Characteristics 16 4 26 8 –25 °C 0 8 12 VDS = 20 V Pulse Test 75 °C TC = 25°C 10 820 Gate to Source Voltage VGS (V) 8 2 412 16 0 4 6 ID = 5 A Drain to Source Saturation Voltage vs. Gate to Source Voltage 10 A Pulse Test 15 A 5 250 Drain Current ID (A) 2 0.1 1.0 5 20 0.5 0.5 1.0 Static Drain to Source on State Resistance vs. Drain Current VGS = 10 V Pulse Test 15 V 0.2 0.05 10 |
类似零件编号 - 2SK1165-E |
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类似说明 - 2SK1165-E |
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