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STP23NM60ND 数据表(PDF) 1 Page - STMicroelectronics

部件名 STP23NM60ND
功能描述  N-channel 600 V - 0.150 廓 - 20 A - D2/I2PAK - TO-220/FP - TO-247 FDmesh??II Power MOSFET
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP23NM60ND 数据表(HTML) 1 Page - STMicroelectronics

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Preliminary Data
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
January 2008
Rev 1
1/15
15
STB23NM60ND-STF23NM60ND
STI23NM60ND-STP/W23NM60ND
N-channel 600 V - 0.150
Ω - 20 A - D2/I2PAK - TO-220/FP - TO-247
FDmesh™ II Power MOSFET (with fast diode)
Features
The worldwide best RDS(on) * area amongst the
fast recovery diode devices
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
High dv/dt and avalanche capabilities
Application
Switching applications
Description
The FDmesh™ II series belongs to the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company's strip layout
and associates all advantages of reduced on-
resistance and fast switching with an intrinsic fast-
recovery body diode.It is therefore strongly
recommended for bridge topologies, in particular
ZVS phase-shift converters.
Figure 1.
Internal schematic diagram
Type
VDSS
(@Tjmax)
RDS(on) max
ID
STB23NM60ND
STI23NM60ND
STF23NM60ND
STP23NM60ND
STW23NM60ND
650 V
650 V
650 V
650 V
650 V
< 0.180
< 0.180
< 0.180
< 0.180
< 0.180
20 A
20 A
20 A(1)
20 A
20 A
1.
Limited by wire bonding
TO-220
TO-220FP
I²PAK
1
2
3
1
2
3
1
2
3
1
2
3
TO-247
D²PAK
1
3
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STB23NM60ND
23NM60ND
D²PAK
Tape & reel
STI23NM60ND
23NM60ND
I²PAK
Tube
STF23NM60ND
23NM60ND
TO-220FP
Tube
STP23NM60ND
23NM60ND
TO-220
Tube
STW23NM60ND
23NM60ND
TO-247
Tube
www.st.com


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