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STB10NK60Z-1 数据表(PDF) 6 Page - STMicroelectronics |
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STB10NK60Z-1 数据表(HTML) 6 Page - STMicroelectronics |
6 / 19 page Electrical characteristics STB10NK60Z - STB10NK60Z-1 - STP10NK60Z/FP - STW10NK60Z 6/19 Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max Unit td(on) tr Turn-on delay time Rise time VDD=300 V, ID=4A, RG=4.7Ω, VGS=10V (see Figure 20) 20 20 ns ns td(off) tf Turn-off delay time Fall time VDD=300 V, ID=4A, RG=4.7Ω, VGS=10V (see Figure 20) 55 30 ns ns tr(Voff) tf tc Off-voltage rise time Fall time Cross-over time VDD=480 V, ID=8A, RG=4.7Ω, VGS=10V (see Figure 20) 18 18 36 ns ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) 10 36 A A VSD (2) 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward on voltage ISD=10A, VGS=0 1.6 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=8A, di/dt = 100A/µs, VDD=40 V, Tj=150°C 570 4.3 15 ns µC A Table 8. Gate-source zener diode Symbol Parameter Test conditions Min Typ Max Unit BVGSO (1) 1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components Gate-source breakdown voltage Igs=± 1mA (open drain) 30 V |
类似零件编号 - STB10NK60Z-1 |
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类似说明 - STB10NK60Z-1 |
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