BF420-AP datasheet(2/5 Pages) STMICROELECTRONICS

部件名	BF420-AP

功能描述	SMALL SIGNAL NPN TRANSISTOR

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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THERMAL DATA

Rthj-amb

•

Rthj-Case

•

Thermal Resistance Junction-Ambient

Max

Thermal Resistance Junction-Case

Max

150

50

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector Cut-off

Current (IE = 0)

VCB = 200 V

TC = 150

oC

VCB = 300 V

10

100

nA

µA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

50

nA

V(BR)CEO

∗ Collector-Emitter

Breakdown Voltage

(IB = 0)

IC = 10 mA

300

V

V(BR)CBO

Collector-Base

Breakdown Voltage

(IE = 0)

IC = 100

µA

300

V

V(BR)EBO

Emitter-Base

Breakdown Voltage

(IC = 0)

IE = 100

µA

5V

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 30 mA

IB = 5 mA

0.6

V

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 30 mA

IB = 5 mA

1.2

V

hFE

∗

DC Current Gain

IC = 25 mA

VCE = 20 V

50

fT

Transition Frequency

IC = 10 mA VCE = 10 V

f =20 MHz

60

MHz

CCBO

Collector-Base

Capacitance

IE = 0

VCB = 10 V

f = 1MHz

6

pF

CEBO

Emitter-Base

Capacitance

IC = 0

VEB = 2 V f = 1MHz

22

pF

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %

BF420

2/5

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