FDD6N20 datasheet(2/9 Pages) FAIRCHILD

部件名	FDD6N20

功能描述	N-Channel MOSFET

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制造商	FAIRCHILD [Fairchild Semiconductor]

网页	http://www.fairchildsemi.com

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2 / 9 page

FDD6N20 / FDU6N20 Rev. A

www.fairchildsemi.com

2

Package Marking and Ordering Information T

C = 25

oC unless otherwise noted

Electrical Characteristics

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Drain-Source Diode Characteristics

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FDD6N20

FDD6N20TM

D-PAK

380mm

16mm

2500

FDD6N20

FDD6N20TF

D-PAK

380mm

16mm

2000

FDU6N20

FDU6N20TU

I-PAK

-

70

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

BVDSS

Drain to Source Breakdown Voltage

ID = 250μA, VGS = 0V, TJ = 25oC

200

-

V

ΔBVDSS

/

ΔTJ

Breakdown Voltage Temperature

Coefficient

ID = 250μA, Referenced to 25oC

-

0.28

-

V/oC

IDSS

Zero Gate Voltage Drain Current

VDS = 200V, VGS = 0V

-

1

μA

VDS = 160V, TC = 125oC-

-

10

IGSS

Gate to Body Leakage Current

VGS = ±30V, VDS = 0V

-

±100

nA

VGS(th)

Gate Threshold Voltage

VGS = VDS, ID = 250μA3.0

-

5.0

V

RDS(on)

Static Drain to Source On Resistance

VGS = 10V, ID = 2.3A

-

0.6

0.8

Ω

gFS

Forward Transconductance

VDS = 40V, ID = 2.3A

(Note 4)

-2.9

-

S

Ciss

Input Capacitance

VDS = 25V, VGS = 0V

f = 1MHz

-

170

230

pF

Coss

Output Capacitance

-

45

60

pF

Crss

Reverse Transfer Capacitance

-

6.3

9.5

pF

Qg(tot)

Total Gate Charge at 10V

VDS = 160V, ID = 6A

VGS = 10V

(Note 4, 5)

-4.7

6.1

nC

Qgs

Gate to Source Gate Charge

-

1.2

-

nC

Qgd

Gate to Drain “Miller” Charge

-

2.2

-

nC

td(on)

Turn-On Delay Time

VDD = 100V, ID = 6A

RG = 25Ω

(Note 4, 5)

-

8.3

26.7

ns

tr

Turn-On Rise Time

-

5.6

21.2

ns

td(off)

Turn-Off Delay Time

-

15

40

ns

tf

Turn-Off Fall Time

-

12.8

35.5

ns

IS

Maximum Continuous Drain to Source Diode Forward Current

-

4.5

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

18

A

VSD

Drain to Source Diode Forward Voltage

VGS = 0V, ISD = 4.5A

-

1.4

V

trr

Reverse Recovery Time

VGS = 0V, ISD = 6A

dIF/dt = 100A/μs

(Note 4)

-

120

-

ns

Qrr

Reverse Recovery Charge

-

0.4

-

μC

Notes:

1: Repetitive Rating: Pulse width limited by maximum junction temperature

2: L = 5.9mH, IAS = 4.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3: ISD ≤ 4.5A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

4: Pulse Test: Pulse width

≤ 300μs, Duty Cycle ≤ 2%

5: Essentially Independent of Operating Temperature Typical Characteristics

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