STP9NB60 datasheet(3/9 Pages) STMICROELECTRONICS

部件名	STP9NB60

功能描述	N - CHANNEL 600V - 0.7ohm - 9A TO-220/TO220FP PowerMESH MOSFET

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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3 / 9 page

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbo l

Parameter

Test Con ditions

Min.

T yp.

Max.

Unit

td(on)

tr

Turn-on Time

Rise Time

VDD = 300 V

ID =4.5 A

RG =4.7

Ω

VGS =10 V

(see test circuit, figure 3)

25

11

35

15

ns

Qg

Q gs

Qgd

Tot al Gate Charge

Gat e-Source Charge

Gat e-Drain Charge

VDD = 480 V

ID =9.0 A VGS =10 V

40

10.5

17.5

56

nC

SWITCHING OFF

Symbo l

Parameter

Test Con ditions

Min.

T yp.

Max.

Unit

tr(Voff)

tf

tc

Off -volt age Rise Time

Fall Time

Cross-over Time

VDD = 480 V

ID =9.0 A

RG =4.7

Ω VGS =10 V

(see test circuit, figure 5)

12

10

21

17

14

29

ns

SOURCE DRAIN DIODE

Symbo l

Parameter

Test Con ditions

Min.

T yp.

Max.

Unit

ISD

ISDM (

•)

Source-drain Current

(pulsed)

9. 0

36

A

VSD (

∗)

Forward On Volt age

ISD =9.0 A

VGS =0

1. 6

V

trr

Qrr

IRRM

Reverse Recovery

Time

Reverse Recovery

Charge

Reverse Recovery

Current

ISD =9.0 A

di/dt = 100 A/

µs

VDD = 100 V

Tj =150

oC

(see test circuit, figure 5)

600

5.4

18

ns

µC

A

(

∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

(

•) Pulse width limited by safe operating area

Safe Operating Area for TO-220

Safe Operating Area for TO-220FP

STP9NB60/FP

3/9

类似零件编号 - STP9NB60

制造商	部件名	数据表	功能描述
VBsemi Electronics Co.,...	STP9NB60	1Mb / 10P	N-Channel 650V (D-S) Power MOSFET

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