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FDS8876 数据表(PDF) 3 Page - Fairchild Semiconductor |
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FDS8876 数据表(HTML) 3 Page - Fairchild Semiconductor |
3 / 12 page ©2007 Fairchild Semiconductor Corporation FDS8876 Rev. B www.fairchildsemi.com 3 Switching Characteristics (VGS = 10V) tON Turn-On Time VDD = 15V, ID = 12.5A VGS = 10V, RGS = 10Ω - - 63 ns td(ON) Turn-On Delay Time - 8 - ns tr Rise Time - 34 - ns td(OFF) Turn-Off Delay Time - 53 - ns tf Fall Time - 19 - ns tOFF Turn-Off Time - - 108 ns Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage ISD = 12.5A - - 1.25 V ISD = 2.1A - - 1.0 V trr Reverse Recovery Time ISD = 12.5A, dISD/dt = 100A/µs - - 29 ns QRR Reverse Recovered Charge ISD = 12.5A, dISD/dt = 100A/µs - - 15 nC Notes: 1: Starting TJ = 25°C, L = 1mH, IAS = 14.5A, VDD = 30V, VGS = 10V. 2: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. a) 50°C/W when mounted on a 1in2 pad of 2 oz copper. b) 125°C/W when mounted on a minimum pad. |
类似零件编号 - FDS8876_07 |
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类似说明 - FDS8876_07 |
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