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December 2000

STP8NC50 - STP8NC50FP

STB8NC50-1

N-CHANNEL 500V - 0.7

Ω - 8A TO-220/TO-220FP/I2PAK

PowerMesh™II MOSFET

s

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

NEW HIGH VOLTAGE BENCHMARK

s

GATE CHARGE MINIMIZED

DESCRIPTION

The PowerMESH

generation of MESH OVERLAY

finements introduced greatly improve the Ron*area

figure of merit while keeping the device at the lead-

ing edge for what concerns swithing speed, gate

charge and ruggedness.

APPLICATIONS

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HIGH CURRENT, HIGH SPEED SWITCHING

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SWITH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVES

ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area

(*) Limited only by maximum temperature allowed

TYPE

STP(B)8NC50(-1)

500 V

< 0.85

Ω

8 A

STP8NC50FP

500 V

< 0.85

Ω

8 A

Symbol

Parameter

Value

Unit

STP(B)8NC50(-1)

STP8NC50FP

500

V

500

V

Gate- source Voltage

±30

V

8

8(*)

A

5.4

5.4(*)

A

Drain Current (pulsed)

32

32(*)

A

135

40

W

Derating Factor

1.075

0.32

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

3

V/ns

Insulation Withstand Voltage (DC)

-

2000

V

Storage Temperature

–65 to 150

°C

Max. Operating Junction Temperature

150

°C

INTERNAL SCHEMATIC DIAGRAM

TO-220

TO-220FP

1

2

3

I²PAK

1

2

3