数据搜索系统,热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

STP80N05-09 数据表(PDF) 2 Page - STMicroelectronics

部件名 STP80N05-09
功能描述  N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
Download  9 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP80N05-09 数据表(HTML) 2 Page - STMicroelectronics

  STP80N05-09 Datasheet HTML 1Page - STMicroelectronics STP80N05-09 Datasheet HTML 2Page - STMicroelectronics STP80N05-09 Datasheet HTML 3Page - STMicroelectronics STP80N05-09 Datasheet HTML 4Page - STMicroelectronics STP80N05-09 Datasheet HTML 5Page - STMicroelectronics STP80N05-09 Datasheet HTML 6Page - STMicroelectronics STP80N05-09 Datasheet HTML 7Page - STMicroelectronics STP80N05-09 Datasheet HTML 8Page - STMicroelectronics STP80N05-09 Datasheet HTML 9Page - STMicroelectronics  
Zoom Inzoom in Zoom Outzoom out
 2 / 9 page
background image
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resist ance Junc tion-case
Max
Thermal Resist ance Junc tion-ambi ent
Max
Thermal Resist ance Case -sink
Typ
Max imum Lead Temperature For Sol dering Pu rpose
1
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Va lue
Unit
IAR
Avalanche Current, Repeti tive or Not-Repetit ive
(pulse width l imit ed by Tj max ,
δ <1%)
60
A
EAS
Single Pulse Avalanc he Energy
(starti ng Tj =25
oC, ID =IAR,VDD =25 V)
600
mJ
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
OFF
Symbol
P arameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-so urce
Breakdown Vo ltage
ID =250
µAVGS = 0
50
V
IDSS
Zero G ate Vo ltage
Drain Current (VGS =0)
VDS =Max Rating
VDS = Max Rating
Tc =125
oC
1
10
µA
µA
IGSS
Gate-body Leak age
Current (VDS =0)
VGS =
± 20 V
± 100
nA
ON (
∗)
Symbol
P arameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold Vo ltage VDS =VGS
ID =250
µA2
3
4
V
RDS(on)
Static Drai n-s ource On
Resi stance
VGS = 10V ID =40 A
0.007
0.009
ID(on)
On State Drai n Current
VDS >ID(on) xRDS(on)max
VGS =10 V
80
A
DYNAMIC
Symbol
P arameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (
∗)
Forward
Transconductance
VDS >ID(on) xRDS(on)max
ID = 40 A
25
S
Ciss
Coss
Crss
Input Capac itance
Output Capaci tance
Reverse Trans fer
Capacitance
VDS =25 V
f = 1 MHz
VGS =0
5900
900
230
pF
pF
pF
STP80N05-09
2/9


类似零件编号 - STP80N05-09

制造商部件名数据表功能描述
logo
STMicroelectronics
STP80N03L-06 STMICROELECTRONICS-STP80N03L-06 Datasheet
77Kb / 5P
   N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
STP80N06-10 STMICROELECTRONICS-STP80N06-10 Datasheet
77Kb / 5P
   N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
logo
VBsemi Electronics Co.,...
STP80N06-10 VBSEMI-STP80N06-10 Datasheet
998Kb / 7P
   N-Channel 60 V (D-S) MOSFET
More results

类似说明 - STP80N05-09

制造商部件名数据表功能描述
logo
STMicroelectronics
STP80N06-10 STMICROELECTRONICS-STP80N06-10 Datasheet
77Kb / 5P
   N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
STW80N06-10 STMICROELECTRONICS-STW80N06-10 Datasheet
57Kb / 5P
   N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
STP80N03L-06 STMICROELECTRONICS-STP80N03L-06 Datasheet
77Kb / 5P
   N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
STP38N06 STMICROELECTRONICS-STP38N06 Datasheet
134Kb / 11P
   N - CHANNEL ENHANCEMENT MODE ?쓀LTRA HIGH DENSITY??POWER MOS TRANSISTOR
STP40N03L-20 STMICROELECTRONICS-STP40N03L-20 Datasheet
65Kb / 7P
   N - CHANNEL ENHANCEMENT MODE ?쓀LTRA HIGH DENSITY??POWER MOS TRANSISTOR
STD20N06 STMICROELECTRONICS-STD20N06 Datasheet
174Kb / 10P
   N - CHANNEL ENHANCEMENT MODE ?쓀LTRA HIGH DENSITY??POWER MOS TRANSISTOR
STH60N10 STMICROELECTRONICS-STH60N10 Datasheet
246Kb / 11P
   N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STP15N05L STMICROELECTRONICS-STP15N05L Datasheet
201Kb / 10P
   N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
November 1996
IRF630FI STMICROELECTRONICS-IRF630FI Datasheet
190Kb / 6P
   N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STP3N50XI STMICROELECTRONICS-STP3N50XI Datasheet
289Kb / 7P
   N-CHANNEL enhancement mode power mos transistor
More results


Html Pages

1 2 3 4 5 6 7 8 9


数据表 下载

Go To PDF Page


链接网址




隐私政策
ALLDATASHEETCN.COM
ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com