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STP75NF75L 数据表(PDF) 1 Page - STMicroelectronics

部件名 STP75NF75L
功能描述  N-CHANNEL 75V - 0.009 ohm - 75A D2PAK/I2PAK/TO-220 STripFET??II POWER MOSFET
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP75NF75L 数据表(HTML) 1 Page - STMicroelectronics

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April 2002
.
STP75NF75L
STB75NF75L STB75NF75L-1
N-CHANNEL 75V - 0.009
Ω - 75A D2PAK/I2PAK/TO-220
STripFET™ II POWER MOSFET
s
TYPICAL RDS(on) = 0.009Ω
s
EXCEPTIONAL dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
LOW THRESHOLD DRIVE
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements
.
APPLICATIONS
s
SOLENOID AND RELAY DRIVERS
s
DC MOTOR CONTROL
s
DC-DC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT
TYPE
VDSS
RDS(on)
ID
STB75NF75L/-1
STP75NF75L
75 V
75 V
<0.011
<0.011
75 A
75 A
1
2
3
1
3
1
2
3
TO-220
D2PAK
TO-263
I2PAK
TO-262
ABSOLUTE MAXIMUM RATINGS
(
•) Current limited by package
(
••) Pulse width limited by safe operating area.
(1) ISD ≤ 75A, di/dt ≤ 500A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(2) Starting Tj = 25 oC, ID = 37.5A, VDD = 30V
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
75
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
75
V
VGS
Gate- source Voltage
± 15
V
ID(•)
Drain Current (continuous) at TC = 25°C
75
A
ID
Drain Current (continuous) at TC = 100°C
70
A
IDM(••)
Drain Current (pulsed)
300
A
Ptot
Total Dissipation at TC = 25°C
300
W
Derating Factor
2
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
20
V/ns
EAS (2)
Single Pulse Avalanche Energy
680
mJ
Tstg
Storage Temperature
-55 to 175
°C
Tj
Max. Operating Junction Temperature
INTERNAL SCHEMATIC DIAGRAM


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