STP6NB80

STP6NB80FP

N - CHANNEL 800V - 1.6

Ω - 5.7A - TO-220/TO-220FP

PowerMESH

™ MOSFET

PRELIMINARY DATA

s

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process, STMicroelectronics has designed an

advanced family

of

power MOSFETs with

outstanding performances. The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

INTERNAL SCHEMATIC DIAGRAM

September 1998

TO-220

TO-220FP

1

2

3

1

2

3

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

ST P6NB80

STP6NB80F P

800

V

Ω)

800

V

G ate-source Volt age

± 30

V

5.7

5.7(*)

A

2

A

•)

Drain Current (pulsed)

22.8

22.8

A

125

40

W

Derating F actor

1.0

0.32

W /

Peak Diode Recovery voltage slope

4

4

V/ns

I nsulation W ithstand Voltage (DC)



2000

V

Storage Temperature

-65 to 150

Max. Operating Junction T emperature

150

(

•) Pulse width limited by safe operating area

(

*) Limited only maximum temperature allowed

TYPE

ST P6NB80

ST P6NB80FP

800 V

800 V

<1.9

Ω

<1.9

Ω

5.7 A

5.7 A

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