STP45NE06 datasheet(2/6 Pages) STMICROELECTRONICS

部件名	STP45NE06

功能描述	N - CHANNEL 60V - 0.022ohm - 45A - TO-220/TO-220FP STripFETO POWER MOSFET

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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2 / 6 page

THERMAL DATA

TO-220

TO-220FP

Rthj-case

Thermal Resistance Junction-case

Max

1.5

4.28

oC/W

Rthj-amb

Rthc-sink

Tl

Thermal Resistance Junction-ambient

Max

Thermal Resistance Case-sink

Typ

Maximum Lead Temperature For Soldering Purpose

62.5

0.5

300

oC/W

oC

AVALANCHE CHARACTERISTICS

Symbol

Parameter

Max Value

Unit

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

45

A

EAS

Single Pulse Avalanche Energy

(starting Tj = 25

oC, ID = IAR, VDD = 25V)

150

mJ

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

OFF

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250

µA

VGS = 0

60

V

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

Tc = 125

oC

1

10

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS =

± 20 V

± 100

nA

ON (

∗)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGS(th)

Gate Threshold

Voltage

VDS = VGS

ID = 250

µA

23

4

V

RDS(on)

Static Drain-source On

Resistance

VGS = 10V

ID = 22.5A

0.022

0.028

Ω

ID(on)

On State Drain Current VDS > ID(on) x RDS(on)max

VGS = 10 V

45

A

DYNAMIC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (

∗)

Forward

Transconductance

VDS > ID(on) x RDS(on)max

ID =22.5 A

15

30

S

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 25 V

f = 1 MHz

VGS = 0

2700

350

70

3600

480

100

pF

STP45NE06/FP

2/6

类似零件编号 - STP45NE06

制造商	部件名	数据表	功能描述
STMicroelectronics	STP45NE06L	88Kb / 6P	N - CHANNEL 60V - 0.022ohm - 45A - TO-220/TO-220FP STripFET POWER MOSFET
STMicroelectronics	STP45NE06LFP	88Kb / 6P	N - CHANNEL 60V - 0.022ohm - 45A - TO-220/TO-220FP STripFET POWER MOSFET

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类似说明 - STP45NE06

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