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SMP80MC-320 数据表(PDF) 3 Page - STMicroelectronics |
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SMP80MC-320 数据表(HTML) 3 Page - STMicroelectronics |
3 / 10 page SMP80MC Characteristics 3/10 Table 3. Thermal resistances Symbol Parameter Value Unit Rth(j-a) Junction to ambient (with recommended footprint) 100 ° C/W Rth(j-l) Junction to leads 20 ° C/W Table 4. Electrical characteristics (Tamb = 25° C) Symbol Parameter VRM Stand-off voltage VBR Breakdown voltage VBO Breakover voltage IRM Leakage current IPP Peak pulse current IBO Breakover current IH Holding current VR Continuous reverse voltage IR Leakage current at VR C Capacitance Types IRM @ VRM IR @ VR (1) 1. IR measured at VR guarantee VBR min ≥ VR Dynamic VBO (2) 2. See Figure 9 functional test circuit 1 Static VBO @ IBO (3) 3. See Figure 10 test circuit 2 IH (4) 4. See Figure 11 functional holding current test circuit 3 C(5) 5. VR = 50 V bias, VRMS = 1 V, F= 1 MHz C(6) 6. VR = 2 V bias, VRMS = 1 V, F = 1 MHz max. max. max. max. max. min. typ. typ. µA V µA V V V mA mA pF pF SMP80MC-120 2 108 5 120 155 155 800 150 12 25 SMP80MC-140 126 140 180 180 SMP80MC-160 144 160 205 205 SMP80MC-200 180 200 255 255 SMP80MC-230 207 230 295 295 SMP80MC-270 243 270 345 345 SMP80MC-320 290 320 400 400 |
类似零件编号 - SMP80MC-320 |
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类似说明 - SMP80MC-320 |
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