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SMP30-120 数据表(PDF) 3 Page - STMicroelectronics |
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SMP30-120 数据表(HTML) 3 Page - STMicroelectronics |
3 / 9 page SMP30 3/9 Table 4: Thermal Resistances Table 5: Electrical Characteristics (Tamb = 25°C) Symbol Parameter Value Unit Rth(j-a) Junction to ambient (with recommended footprint) 120 °C/W Rth(j-l) Junction to leads 30 °C/W Symbol Parameter VRM Stand-off voltage VBR Breakdown voltage VBO Breakover voltage IRM Leakage current IPP Peak pulse current IBO Breakover current IH Holding current VR Continuous reverse voltage IR Leakage current at VR C Capacitance Types IRM @ VRM IR @ VR Dynamic VBO Static VBO @ IBO IH CC max. max. max. max. max. min. typ. typ. note1 note 2 note 3 note 4 note 5 note 6 µAVµAV V V mA mA pF pF SMP30-62 2 56 5 62 85 82 800 150 20 40 SMP30-68 61 68 93 90 20 40 SMP30-100 90 100 135 133 16 35 SMP30-120 108 120 160 160 16 30 SMP30-130 117 130 173 173 14 30 SMP30-180 162 180 235 240 12 25 SMP30-200 180 200 262 267 12 25 SMP30-220 198 220 285 293 10 20 SMP30-240 216 240 300 320 10 20 SMP30-270 243 270 350 360 10 20 Note 1: IR measured at VR guarantee VBR min ≥ VR Note 2: see functional test circuit 1 Note 3: see test circuit 2 Note 4: see functional holding current test circuit 3 Note 5: VR = 50V bias, VRMS=1V, F=1MHz Note 6: VR = 2V bias, VRMS=1V, F=1MHz |
类似零件编号 - SMP30-120 |
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类似说明 - SMP30-120 |
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