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STP36N05L 数据表(PDF) 3 Page - STMicroelectronics |
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STP36N05L 数据表(HTML) 3 Page - STMicroelectronics |
3 / 10 page ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Condi tions Mi n. Typ. Max. Unit td(on) tr Turn-on Time Rise Time VDD =25 V ID =18 A RG =50 Ω VGS =5 V (see test circuit, figure 3) 90 550 130 800 ns ns (di/dt) on Turn-on Current Slope VDD =40 V ID =36 A RG =50 Ω VGS =5 V (see test circuit, figure 5) 85 A/ µs Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD =40 V ID =36 A VGS =5 V 35 11 19 50 nC nC nC SWITCHING OFF Symbol Parameter Test Condi tions Mi n. Typ. Max. Unit tr(Voff) tf tc Of f-voltage Rise Time Fall Time Cross-over Time VDD =40 V ID =36 A RG =50 Ω VGS =5 V (see test circuit, figure 5) 110 180 310 160 260 450 ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Condi tions Mi n. Typ. Max. Unit ISD I SDM( •) Source-drain Current Source-drain Current (pulsed) 36 144 A A VSD ( ∗) Forward On Volt age ISD =36 A VGS =0 1.6 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 36 A di/dt = 100 A/ µs VDD =30 V Tj =150 oC (see test circuit, figure 5) 100 0.27 5.5 ns µC A ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( •) Pulse width limited by safe operating area Safe Operating Areas For TO-220 Safe Operating Areas For ISOWATT220 STP36N05L/FI 3/10 |
类似零件编号 - STP36N05L |
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类似说明 - STP36N05L |
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