STP32N06 datasheet(1/10 Pages) STMICROELECTRONICS

部件名	STP32N06

功能描述	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

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制造商	STMICROELECTRONICS [STMicroelectronics]

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STP32N06L

STP32N06LFI

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTOR

s

TYPICAL RDS(on) = 0.045

Ω

s

AVALANCHE RUGGED TECHNOLOGY

s

100% AVALANCHE TESTED

s

REPETITIVE AVALANCHE DATA AT 100

oC

s

LOW GATE CHARGE

s

HIGH CURRENT CAPABILITY

s

LOGIC LEVEL COMPATIBLE INPUT

s

175

oC OPERATING TEMPERATURE

s

APPLICATION ORIENTED

CHARACTERIZATION

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SOLENOID AND RELAY DRIVERS

s

REGULATORS

s

DC-DC & DC-AC CONVERTERS

s

MOTOR CONTROL, AUDIO AMPLIFIERS

s

AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

INTERNAL SCHEMATIC DIAGRAM

1

2

3

TO-220

ISOWATT220

November 1996

TYPE

VDSS

R DS(on)

ID

STP32N06L

STP32N06LFI

60 V

< 0.055

Ω

< 0.055

Ω

32 A

19 A

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Val ue

Unit

STP32N06L

STP32N06LFI

VDS

Drain-source Voltage (VGS =0)

60

V

VDG R

Drain- gate Voltage (RGS =20 k

Ω)60

V

VGS

Gate-source Voltage

± 15

V

ID

Drain Current (cont inuous) at T c =25

oC32

19

A

ID

Drain Current (cont inuous) at T c =100

oC22

13

A

IDM(

•)

Drain Current (pulsed)

128

A

Ptot

Total Dissipation at Tc =25

oC

105

40

W

Derating Factor

0.7

0.27

W/

oC

VISO

I nsulat ion Withstand Voltage (DC)



2000

V

Tstg

St orage Temperat ure

-65 to 175

oC

Tj

Max. Operat ing Junction Temperature

175

oC

(

•) Pulse width limited by safe operating area

1

2

3

1/10

类似零件编号 - STP32N06

制造商	部件名	数据表	功能描述
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STP32N06 数据表(PDF) 1 Page - STMicroelectronics

STP32N06 数据表(HTML) 1 Page - STMicroelectronics

类似零件编号 - STP32N06

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数据表下载

链接网址

STP32N06 数据表(PDF) 1 Page - STMicroelectronics

STP32N06 数据表(HTML) 1 Page - STMicroelectronics

类似零件编号 - STP32N06

类似说明 - STP32N06

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数据表 下载

链接网址

数据表下载