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STP30NE06FP 数据表(PDF) 1 Page - STMicroelectronics |
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STP30NE06FP 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 6 page  STP30NE06 STP30NE06FP N - CHANNEL 60V - 0.042 Ω - 30A - TO-220/TO-220FP STripFET ™ POWER MOSFET PRELIMINARY DATA s TYPICAL RDS(on) = 0.042 Ω s AVALANCHE RUGGED TECHNOLOGY s 100% AVALANCHE TESTED s 175 oC OPERATING TEMPERATURE s HIGH dV/dt CAPABILITY s APPLICATION ORIENTED CHARACTERIZATION DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique ”Single Feature Size” process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalance characteristics and less critical alignment steps therefore a remarka- ble manufacturing reproducibility. APPLICATIONS s DC MOTOR CONTROL s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION ® INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Un it STP30NE06 STP30NE06FP VDS Drain-source Voltage (VGS =0) 60 V VDGR Drain- gate Voltage (RGS =20 k Ω) 60 V VGS G ate-source Volt age ± 20 V ID Drain Current (continuous) at Tc =25 oC30 17 A ID Drain Current (continuous) at Tc =100 oC21 12 A IDM ( •) Drain Current (pulsed) 120 68 A Ptot T otal Dissipat ion at Tc =25 oC80 30 W Derating Factor 0.53 0.2 W / o C VISO I nsulation W ithstand Voltage (DC) 2000 V dV/dt Peak Diode Recovery voltage slope 7 V/ns Tstg Storage Temperature -65 to 175 o C Tj Max. Operating Junction Temperature 175 o C ( •) Pulse width limited by safe operating area ( 1)ISD ≤ 30 A, di/dt ≤300 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX ’ TYPE VDSS RDS(on) ID STP30NE06 STP30NE06FP 60 V 60 V <0.050 Ω <0.050 Ω 30 A 17 A January 1999 TO-220 TO-220FP 1 2 3 1 2 3 1/6 |
类似零件编号 - STP30NE06FP |
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类似说明 - STP30NE06FP |
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