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STP2N60 数据表(PDF) 3 Page - STMicroelectronics |
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STP2N60 数据表(HTML) 3 Page - STMicroelectronics |
3 / 10 page ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Condi tions Mi n. Typ. Max. Unit td(on) tr Turn-on Time Rise Time VDD =35 V ID =2 A RG =50 Ω VGS =10 V (see test circuit, figure 3) 25 110 40 150 ns ns (di/dt) on Turn-on Current Slope VDD =480 V ID =2.9 A RG =50 Ω VGS =10 V (see test circuit, figure 5) 75 A/ µs Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 480 V ID =2.9 A VGS =10 V 33 7 13 45 nC nC nC SWITCHING OFF Symbol Parameter Test Condi tions Mi n. Typ. Max. Unit tr(Voff) tf tc Of f-voltage Rise Time Fall Time Cross-over Time VDD =480 V ID =2.9 A RG =50 Ω VGS =10 V (see test circuit, figure 5) 70 20 100 95 30 130 ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Condi tions Mi n. Typ. Max. Unit ISD I SDM( •) Source-drain Current Source-drain Current (pulsed) 2.9 11 A A VSD ( ∗) Forward On Volt age ISD =2.9 A VGS =0 2 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD =2.9 A di/dt =100 A/ µs VDD =80 V Tj =150 oC (see test circuit, figure 5) 500 7 28 ns µC A ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( •) Pulse width limited by safe operating area Safe Operating Areas For TO-220 Safe Operating Areas For ISOWATT220 STP2N60/FI 3/10 |
类似零件编号 - STP2N60 |
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类似说明 - STP2N60 |
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