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STP20NM60FP 数据表(PDF) 2 Page - STMicroelectronics

部件名 STP20NM60FP
功能描述  N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP20NM60FP 数据表(HTML) 2 Page - STMicroelectronics

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STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1
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Table 3: Absolute Maximum ratings
( ) Pulse width limited by safe operating area
(1)
ISD ≤ 20 A, di/dt ≤ 400 A/µs, VDD V(BR)/DSS, Tj TJMAX
(*) Limited only by maximum temperature allowed
Table 4: Thermal Data
Table 5: Avalanche Characteristics
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 6: On/Off
Symbol
Parameter
Value
Unit
TO-220/D²PAK/
I²PAK/TO-247
TO-220FP
VDS
Drain-source Voltage (VGS = 0)
600
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
600
V
VGS
Gate- source Voltage
±30
V
ID
Drain Current (continuous) at TC = 25°C
20
20 (*)
A
ID
Drain Current (continuous) at TC = 100°C
12.6
12.6 (*)
A
IDM ( )
Drain Current (pulsed)
80
80 (*)
A
PTOT
Total Dissipation at TC = 25°C
192
45
W
Derating Factor
1.2
0.36
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
15
V/ns
VISO
Insulation Winthstand Voltage (DC)
--
2500
V
Tstg
Storage Temperature
-65 to 150
°C
Tj
Max. Operating Junction Temperature
150
°C
TO-220/D²PAK/
I²PAK/TO-247
TO-220FP
Unit
Rthj-case
Thermal Resistance Junction-case Max
0.65
2.8
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
°C/W
Tl
Maximum Lead Temperature For Soldering Purpose
300
°C
Symbol
Parameter
Max. Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
10
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
650
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
600
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS= Max Rating, TC= 125°C
1
10
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30V
±100
µA
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
34
5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 10 A
0.25
0.29


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