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TDE0160 数据表(PDF) 4 Page - STMicroelectronics |
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TDE0160 数据表(HTML) 4 Page - STMicroelectronics |
4 / 18 page 2 Electrical ratings TDE0160 4/18 2 Electrical ratings Table 1. Absolute maximum ratings 2.1 Electrical characteristics Tamb = +25°C, unless otherwise specified. Note: 2. See Characteristics Curves Symbol Parameter Value Unit VCC Supply Voltage 36 V VO Output Voltage (1) 1. Internal peak limiting to protect against transient voltage surges. 36 V IO (I1 - I3) Output Current (I1 - I3) 40 mA IZ Zener Current 40 mA TJ Junction Temperature +150 °C Toper Ambient Temperature Range –25 to 85 °C Tstg Storage Temperature Range –65 to 150 °C Table 2. Electrical Characteristcs Symbol Parameter Test conditions Pin Min. Typ. Max. Unit VCC Supply Voltage 11 4 36 V VZ Zener Voltage IZ = 20mA 9 - 11 3 4 V ICC Supply Current 11 1.2 mA VLIM Limiting I = 0.1mA 1 or 3 42 V VSAT Output Transistor Saturation Voltage I1 or I3 = +20mA 1 or 3 0.9 1.1 V ILEAK Output Transistor Leakage Current V = +30V 1 or 3 2 µA VTH Switching Threshold 12 90 110 130 mV Rn Negative Resistance (2) 5kΩ < RH < 50kΩ, f = 100kHz, RS = 0 Rn = RH HYST Inherent Hysteresis R2 = 0 1 2 % PHYST Programmed Hysteresis H < 15% Rs Rs + RH % fOSC Oscillation Frequency 1 MHz FSW Switching Frequency (with matched oscillator circuit) 750 Hz TD Switching Time-delay 0.5Cd ( µF) s TRE Switching Response Time Cd = 10nF, VCC = +20V 10 µs |
类似零件编号 - TDE0160 |
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类似说明 - TDE0160 |
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