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TDA8133D 数据表(PDF) 9 Page - STMicroelectronics |
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TDA8133D 数据表(HTML) 9 Page - STMicroelectronics |
9 / 13 page 9/13 TDA8133/D POWER DISSIPATION AND LAYOUT INDICATIONS 5 POWER DISSIPATION AND LAYOUT INDICATIONS The power is mainly dissipated by the two device buffers. It can be calculated by the equation: P = (VIN1-VO1) x IO1 + (VIN2-VO2) x IO2 The following table lists the different RthJA values of these packages with or without a heat sink and the corresponding maximum power dissipation assuming: q Maximum Ambient Temperature = 70° C q Maximum Junction Temperature = 140° C Device Heat Sink RthJA in °C/W PMAX in W TDA8133 No 50 1.4 Yes 20 3.5 TDA8133D No 56 to 40 1.25 to 1.75 Yes 32 2.2 Figure 7: Thermal Resistance (Junction-to-Ambient) of DIP16 Package without Heat Sink Figure 8: Metal plate mounted near the TDA8133D for heat sinking Copper area (cm²) (35 µm plus solder) Board is face-down To optimize the thermal conductivity of the copper layer and the exchanges with the air, the solder must cover the maximum amount of this area. 60 40 50 10 12 0 55 45 24 8 6 Test Board with “On Board” square heat sink area. Top View Bottom View |
类似零件编号 - TDA8133D |
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类似说明 - TDA8133D |
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