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L6386ED 数据表(PDF) 3 Page - STMicroelectronics |
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L6386ED 数据表(HTML) 3 Page - STMicroelectronics |
3 / 18 page L6386E Electrical data 3/18 1 Electrical data 1.1 Absolute maximum ratings Note: ESD immunity for pins 12, 13 and 14 is guaranteed up to 900V (Human Body Model) 1.2 Thermal data 1.3 Recommended operating conditions Table 1. Absolute maximum ratings Symbol Parameter Value Unit Vout Output voltage -3 to Vboot - 18 V Vcc Supply voltage - 0.3 to +18 V Vboot Floating supply voltage -1 to 618 V Vhvg High side gate output voltage - 1 to Vboot V Vlvg Low side gate output voltage -0.3 to Vcc +0.3 V Vi Logic input voltage -0.3 to Vcc +0.3 V Vdiag Open drain forced voltage -0.3 to Vcc +0.3 V Vcin Comparator input voltage -0.3 to Vcc +0.3 V dVout/dt Allowed output slew rate 50 V/ns Ptot Total power dissipation (TJ = 85 °C) 750 mW Tj Junction temperature 150 °C Tstg Storage temperature -50 to 150 °C Table 2. Thermal data Symbol Parameter SO-14 DIP-14 Unit Rth(JA) Thermal Resistance Junction to ambient 165 100 °C/W Table 3. Recommended operating conditions Symbol Pin Parameter Test condition Min Typ Max Unit Vout 12 Output voltage (1) 1. If the condition Vboot - Vout < 18V is guaranteed, Vout can range from -3 to 580V 580 V VBS (2) 2. VBS = Vboot - Vout 14 Floating supply voltage (1) 17 V fsw Switching frequency HVG,LVG load CL = 1nF 400 kHz Vcc 4 Supply voltage 17 V T J Junction temperature -45 125 °C |
类似零件编号 - L6386ED |
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类似说明 - L6386ED |
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