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L6376 数据表(PDF) 8 Page - STMicroelectronics |
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L6376 数据表(HTML) 8 Page - STMicroelectronics |
8 / 18 page Electrical characteristics L6376 8/18 AC operation tr -tf 2, 3, 8, 9 Rise or fall time Vs = 24 V; Rl = 47 Ω Rl to ground 3.8 µs td 12 vs 9 13 vs 8 14 vs 3 15 vs 2 Delay time 1 µs dV/dt 2, 3, 8, 9 Slew rate (Rise and fall edge) Vs = 24 V; Rl = 47 Ω Rl to ground Rise Fall 3 4 5 7.6 7 10 V/ µs V/ µs t ON 16 On time during short circuit condition 50 pF < CDON < 15 nF 1.28 µs/pF tOFF 17 Off time during short circuit condition pin 13 grounded 64 tON 50 pF < CDOFF< 15 nF 1.28 µs/pF fmax Maximum operating frequency 25 kHz Source drain ndmos diode Vfsd Forward on voltage Ifsd = 500 mA 1 1.5 V Ifp Forward peak current tp = 10 ms; duty cycle = 20 % 1.5 A trr Reverse recovery time Ifsd = 500 mA; dIfsd/dt = 25 A/ms 200 ns tfr Forward recovery time 50 ns Table 5. Electrical characteristcs (continued) (Vs = 24 V; TJ = -25 to 125 °C; unless otherwise specified.) Symbol Pin# Parameter Test condition Min Typ Max Unit |
类似零件编号 - L6376 |
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类似说明 - L6376 |
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