STE53NC50 datasheet(3/8 Pages) STMICROELECTRONICS

部件名	STE53NC50

功能描述	N-CHANNEL 500V - 0.070ohm - 53A ISOTOP PowerMesh?줚I MOSFET

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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STE53NC50

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on Delay Time

VDD = 250V, ID = 26.5A

RG = 4.7Ω VGS = 10V

(see test circuit, Figure 3)

46

ns

tr

Rise Time

70

ns

Qg

Total Gate Charge

VDD = 400V, ID = 53A,

VGS = 10V

310

434

nC

Qgs

Gate-Source Charge

46

nC

Qgd

Gate-Drain Charge

150

nC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

tr(Voff)

Off-voltage Rise Time

VDD = 400V, ID = 53A,

RG = 4.7Ω, VGS = 10V

(see test circuit, Figure 5)

45

ns

tf

Fall Time

38

ns

tc

Cross-over Time

85

ns

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain Current

53

A

ISDM (2)

Source-drain Current (pulsed)

212

A

VSD (1)

Forward On Voltage

ISD = 53A, VGS = 0

1.6

V

trr

Reverse Recovery Time

ISD = 53A, di/dt = 100A/µs,

VDD = 70V, Tj = 150°C

(see test circuit, Figure 5)

760

ns

Qrr

Reverse Recovery Charge

17.86

µC

IRRM

Reverse Recovery Current

47

A

Safe Operating Area

Thermal Impedence

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STE53NC50 数据表(PDF) 3 Page - STMicroelectronics

STE53NC50 数据表(HTML) 3 Page - STMicroelectronics

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STE53NC50 数据表(PDF) 3 Page - STMicroelectronics

STE53NC50 数据表(HTML) 3 Page - STMicroelectronics

类似零件编号 - STE53NC50

类似说明 - STE53NC50

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