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STD2NC40 数据表(PDF) 3 Page - STMicroelectronics |
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STD2NC40 数据表(HTML) 3 Page - STMicroelectronics |
3 / 8 page 3/8 STD2NC40-1 Thermal Impedence Safe Operating Area ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD = 200V, ID = 0.7A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) 7.5 ns tr Rise Time 12 ns Qg Total Gate Charge VDD = 320V, ID = 1.5A, VGS = 10V 6.1 8.2 nC Qgs Gate-Source Charge 2.1 nC Qgd Gate-Drain Charge 2.4 nC Symbol Parameter Test Condit ions Min. Typ. Max. Unit tr(Voff) Off-voltage Rise Time VDD = 320V, ID = 1.5A, RG =4.7Ω, VGS = 10V (see test circuit, Figure 5) 20 ns tf Fall Time 27 ns tc Cross-over Time 29 ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 1.5 A ISDM (1) Source-drain Current (pulsed) 6 A VSD (2) Forward On Voltage ISD = 1.5A, VGS =0 1.5 V trr Reverse Recovery Time ISD = 1.5A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C (see test circuit, Figure 5) 180 ns Qrr Reverse Recovery Charge 625 nC IRRM Reverse Recovery Current 5 A |
类似零件编号 - STD2NC40 |
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类似说明 - STD2NC40 |
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