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STD2NA50 数据表(PDF) 3 Page - STMicroelectronics |
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STD2NA50 数据表(HTML) 3 Page - STMicroelectronics |
3 / 6 page ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Time Rise Time VDD = 250 V ID = 1.1 A RG = 4.7 Ω VGS = 10 V 7 8 10 11 ns ns (di/dt)on Turn-on Current Slope VDD = 400 V ID = 2.2 A RG = 47 Ω VGS = 10 V 350 A/ µs Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 400 V ID =2.2 A VGS = 10 V 18 5.5 7 25 nC nC nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD = 400 V ID = 2.2 A RG = 4.7 Ω VGS = 10 V 7 7 14 10 10 20 ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM( •) Source-drain Current Source-drain Current (pulsed) 2.2 8.8 A A VSD ( ∗) Forward On Voltage ISD = 2.2 A VGS = 0 1.6 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 2.2 A di/dt = 100 A/ µs VDD = 100 V Tj = 150 oC 380 4.4 23 ns µC A ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( •) Pulse width limited by safe operating area STD2NA50 3/6 |
类似零件编号 - STD2NA50 |
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类似说明 - STD2NA50 |
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