STGF19NC60WD datasheet(4/14 Pages) STMICROELECTRONICS

部件名	STGF19NC60WD

功能描述	N-channel 600V - 7A - TO-220 Ultra fast PowerMESH IGBT

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制造商	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

STGF19NC60WD

4/14

2

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 3.

Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VBR(CES)

Collector-emitter

breakdown voltage

IC= 1mA, VGE= 0

600

V

VCE(sat)

Collector-emitter saturation

voltage

VGE= 15V, IC= 12A

VGE= 15V, IC=12A,Tc=125°C

2.1

1.8

2.5

V

VGE(th)

Gate threshold voltage

VCE= VGE, IC= 250 µA

3.75

5.75

V

ICES

Collector cut-off current

(VGE = 0)

VCE= Max rating,TC= 25°C

VCE= Max rating,TC= 125°C

150

1

µA

mA

IGES

Gate-emitter leakage

current (VCE = 0)

VGE= ±20V, VCE= 0

±100

nA

gfs

Forward transconductance

VCE = 15V, IC= 12A

10

S

Table 4.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Coes

Cres

Input capacitance

Output capacitance

Reverse transfer

capacitance

VCE = 25V, f = 1MHz,

VGE = 0

1180

130

26

pF

Qg

Qge

Qgc

Total gate charge

Gate-emitter charge

Gate-collector charge

VCE = 390V, IC = 5A,

VGE = 15V,

Figure 16

53

10

21

nC

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类似说明 - STGF19NC60WD

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More results

STGF19NC60WD 数据表(PDF) 4 Page - STMicroelectronics

STGF19NC60WD 数据表(HTML) 4 Page - STMicroelectronics

类似零件编号 - STGF19NC60WD

类似说明 - STGF19NC60WD

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STGF19NC60WD 数据表(PDF) 4 Page - STMicroelectronics

STGF19NC60WD 数据表(HTML) 4 Page - STMicroelectronics

类似零件编号 - STGF19NC60WD

类似说明 - STGF19NC60WD

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