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STP16NM50N 数据表(PDF) 5 Page - STMicroelectronics |
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STP16NM50N 数据表(HTML) 5 Page - STMicroelectronics |
5 / 18 page STB16NM50N - STF/I16NM50N - STP16NM50N - STW16NM50N Electrical characteristics 5/18 Table 7. Switching times Symbol Parameter Test conditions Min. Typ Max Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 250 V, ID = 7.5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 18) 20 15 60 16 ns ns ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ Max Unit ISD ISDM Source-drain current Source-drain current (pulsed) 15 60 A A VSD (1) 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward on voltage ISD = 15 A, VGS=0 1.3 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD =15 A, di/dt =100 A/µs, VDD = 100 V (see Figure 23) 400 5 24 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current VDD = 100 V di/dt =100 A/µs, ISD = 15 A Tj = 150 °C (see Figure 23) 500 6 24 ns µC A |
类似零件编号 - STP16NM50N |
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类似说明 - STP16NM50N |
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