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ST1284-03A8RL 数据表(PDF) 5 Page - STMicroelectronics

部件名 ST1284-03A8RL
功能描述  PARALLEL PORT SINGLE TERMINATION NETWORK WITH 짹15kV ESD PROTECTION
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

ST1284-03A8RL 数据表(HTML) 5 Page - STMicroelectronics

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ST1284-xxA8/T8
To have a good approximation of the remaining voltages at both Vin and Vout stages, we give the typical
dynamical resistance value Rd. By taking into account these following hypothesis : Rt>Rd, Rg>Rd and
Rload>Rd, it gives these formulas:
Vinput
RV
RV
R
gBR
d
PP
g
=
+
..
Voutput
R V
R Vinput
R
tBR
d
t
=
+
..
The results of the calculation done for VPP=8kV, Rg=330
Ω (IEC61000-4-2 standard), VBR=7V (typ.)
and Rd = 1
Ω (typ.) give:
Vinput = 31.2 V
Voutput = 7.95 V
This confirms the very low remaining voltage across the device to be protected. It is also important to note
that in this approximation the parasitic inductance effect was not taken into account. This could be few
tenths of volts during few ns at the input side. This parasitic effect is not present at the output side due the
low current involved after the resistance R.
The measurements done here after show very clearly (Fig. A5) the high efficiency of the ESD protection :
- no influence of the parasitic inductances on Vout stage
- Voutput clamping voltage very close to VBR (positive strike) and -VF (negative strike)
ST1284
Vinput
Voutput
ESD
SURGE
Fig. A4: Measurement conditions
Fig. A5: Remaining voltage at the input and output of the device during a ±16kV ESD surge
(IEC61000-4-2).


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