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2N2222A
High Speed Switching Transistors
Page 3
31/05/05 V1.0
Electrical Characteristics (Ta = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Rating
Unit
DC Current Gain
hFE
IC = 0.1mA, VCE = 10V
IC = 1mA, VCE = 10V
IC = 10mA, VCE = 10V
Ta = 55°C
IC = 10mA, VCE = 10V
IC = 150mA, VCE = 10V
IC = 150mA, VCE = 1V
IC = 500mA, VCE = 10V
>35
>50
>75
>35
100-300
>50
>40
-
Dynamic Characteristics
ALL F = 1kHz
Small Signal Current Gain
hfe
IC = 1mA, VCE = 10V
IC = 10mA, VCE = 10V
50 - 300
75 - 375
-
Input Impedance
hie
IC = 1mA, VCE = 10V
IC = 10mA, VCE = 10V
2.0-8.0
0.25-1.25
k
Ω
Voltage Feedback Ratio
hre
IC = 1mA, VCE = 10V
IC = 10mA, VCE = 10V
<8.0
<4.0
x10-4
Output Admittance
hoe
IC = 1mA, VCE = 10V
IC = 10mA, VCE = 10V
5.0-35
25-200
umhos
Collector Base Time Constant
rb'Cc
IE = 20mA, VCB = 20V
f = 31.8MHz
<150
ps
Real Part Common-Emitter High Frequency
Re(hie)
IC = 20mA, VCE = 20V
<60
Ω
Input Impedance
-
f = 300MHz
-
-
Noise Figure
NF
IC = 100µA, VCE = 10V
Rs = 1kohms, f = 1kHz
<4.0
dB
Dynamic Characteristics
Transistors Frequency
ft
IC = 20mA, VCE = 20V
f = 100MHz
>300
MHz
Output Capacitance
Cob
VCB = 10V, IE = 0
f = 100kHz
<8.0
pF
Input Capacitance
Cib
VEB = 0.5V, IC = 0
f = 100kHz
<25
Switching Time
Delay Time
Rise Time
td
tr
IC = 150mA,IB1 = 15mA
VCC = 30V, VBE = 0.5V
<10
<25
ns
Storage Time
Fall Time
ts
tf
IC = 150mA, IB1 =
IB2 = 15mA, VCC = 30V
<225
<60
*Pulse Condition: Pulse Width = 300
µs, Duty Cycle = 2%