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STD95NH02L-1 数据表(PDF) 1 Page - STMicroelectronics |
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STD95NH02L-1 数据表(HTML) 1 Page - STMicroelectronics |
1 / 16 page August 2007 Rev 4 1/16 16 STD95NH02L-1 STD95NH02L N-channel 24V - 0.0039 Ω - 80A - DPAK - IPAK Ultra low gate charge STripFET™ Power MOSFET Features ■ Conduction losses reduced ■ Switching losses reduced ■ Low threshold device Description The device is based on the latest generation of ST’s proprietary STripFET™ technology. An innovative layout enables the device to also exhibit extremely low gate charge for the most demanding requirements in high-frequency DC- DC converters. It’s therefore ideal for high-density converters in Telecom and Computer applications. Application ■ Switching applications Figure 1. Internal schematic diagram Type VDSS RDS(on) ID STD95NH02L 24V < 0.005 Ω 80A(1) 1. Value limited by wire bonding STD95NH02L-1 24V < 0.005 Ω 80A(1) DPAK 1 3 3 2 1 IPAK Table 1. Device summary Order code Marking Package Packaging STD95NH02LT4 D95NH02L DPAK Tape & reel STD95NH02L-1 D95NH02L IPAK Tube www.st.com |
类似零件编号 - STD95NH02L-1 |
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类似说明 - STD95NH02L-1 |
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