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STY80NM60N 数据表(PDF) 3 Page - STMicroelectronics |
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STY80NM60N 数据表(HTML) 3 Page - STMicroelectronics |
3 / 9 page STY80NM60N Electrical characteristics 3/9 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 600 V dv/dt (1) 1. Characteristic value at turn off on inductive load Drain source voltage slope Vdd = 480 V, Id = 80 A, Vgs = 10 V Tbd V/ns IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating, @125 °C 1 10 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V RDS(on) Static drain-source on resistance VGS = 10 V, ID = 40 A 0.035 0.04 Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Forward transconductance VDS=15 V, ID =40 A Tbd S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f = 1 MHz, VGS = 0 Tbd Tbd Tbd pF pF pF Coss eq. (2) 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS Equivalent output capacitance VGS = 0 V, VDS = 0 V to 480 V Tbd pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 480 V, ID = 80 A, VGS = 10 V, (see Figure 3) Tbd Tbd Tbd nC nC nC Rg Gate input resistance f=1MHz Gate DC Bias=0 Test signal level = 20 mV open drain Tbd Ω |
类似零件编号 - STY80NM60N |
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类似说明 - STY80NM60N |
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