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TS68332VR20 数据表(PDF) 9 Page - ATMEL Corporation |
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TS68332VR20 数据表(HTML) 9 Page - ATMEL Corporation |
9 / 57 page 9 2118A–HIREL–11/05 TS68332 5.3.1 Power Considerations The average chip-junction temperature, TJ, in °C can be obtained from: T J = TA + (PD ⋅ θ JA) (1) T A = Ambient Temperature, °C θ JA = Package Thermal Resistance, Junction-to-Ambient, °C/W P D = PINT + PI/O P INT = ICC ⋅ V CC, Watts - Chip Internal Power PI/O = Power Dissipation on Input and Output Pins - User Determined For most applications P I/O < PINT and can be neglected. An approximate relationship between P D and TJ (if PI/O is neglected) is: PD = K ÷ (TJ + 273) (2) Solving equations (1) and (2) for K gives: K = P D ⋅ (T A + 273) + θJA ⋅ P D 2 (3) where K is a constant pertaining to the particular part K can be determined from equation (3) by measuring P D (at equilibrium) for a known TA. Using this value of K, the values of PD and TJ can be obtained by solving equations (1) and (2) iteratively for any value of T A. The total thermal resistance of a package ( θ JA) can be separated into two components, θJC and θ CA, representing the barrier to heat flow from the semiconductor junction to the package (case), surface (θ JC) and from the case to the outside ambient (θCA). Table 5-1. Absolute Maximum Ratings Symbol Parameter Test Conditions Min Max Unit V DD Supply Voltage -0.3 +7.0 V V I Input Voltage -0.3 +7.0 V P DMAX Max Power Dissipation Low Power Operation 600 mW Stand By Mode 500 mW T case Operating Temperature M Suffix -55 +125 °C V Suffix -40 +85 °C T stg Storage Temperature -55 +150 °C T leads Lead Temperature Max 5 Sec. Soldering +270 °C Table 5-2. Thermal Characteristics (at 25°C) Package Symbol Parameter Value Unit PGA 132 θ J-A Thermal Resistance Ceramic Junction-to-ambient TBD °C/W θ J-C Thermal Resistance Ceramic Junction-to-case 10 °C/W CERQUAD 132 θ J-A Thermal Resistance Ceramic Junction-to-ambient TBD °C/W θ J-C Thermal Resistance Ceramic Junction-to-case 10 °C/W |
类似零件编号 - TS68332VR20 |
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类似说明 - TS68332VR20 |
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