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TS68332VR20 数据表(PDF) 9 Page - ATMEL Corporation

部件名 TS68332VR20
功能描述  High Highperformance 32-bit Integrated Microcontroller
Download  57 Pages
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制造商  ATMEL [ATMEL Corporation]
网页  http://www.atmel.com
标志 ATMEL - ATMEL Corporation

TS68332VR20 数据表(HTML) 9 Page - ATMEL Corporation

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9
2118A–HIREL–11/05
TS68332
5.3.1
Power Considerations
The average chip-junction temperature, TJ, in °C can be obtained from:
T
J = TA + (PD
θ
JA)
(1)
T
A = Ambient Temperature, °C
θ
JA = Package Thermal Resistance, Junction-to-Ambient, °C/W
P
D = PINT + PI/O
P
INT = ICC
V
CC, Watts - Chip Internal Power
PI/O = Power Dissipation on Input and Output Pins - User Determined
For most applications P
I/O < PINT and can be neglected.
An approximate relationship between P
D and TJ (if PI/O is neglected) is:
PD = K ÷ (TJ + 273)
(2)
Solving equations (1) and (2) for K gives:
K = P
D
(T
A + 273) + θJA
P
D
2
(3)
where K is a constant pertaining to the particular part K can be determined from equation (3) by
measuring P
D (at equilibrium) for a known TA. Using this value of K, the values of PD and TJ can
be obtained by solving equations (1) and (2) iteratively for any value of T
A.
The total thermal resistance of a package (
θ
JA) can be separated into two components, θJC and
θ
CA, representing the barrier to heat flow from the semiconductor junction to the package (case),
surface
JC) and from the case to the outside ambient (θCA).
Table 5-1.
Absolute Maximum Ratings
Symbol
Parameter
Test Conditions
Min
Max
Unit
V
DD
Supply Voltage
-0.3
+7.0
V
V
I
Input Voltage
-0.3
+7.0
V
P
DMAX
Max Power Dissipation
Low Power Operation
600
mW
Stand By Mode
500
mW
T
case
Operating Temperature
M Suffix
-55
+125
°C
V Suffix
-40
+85
°C
T
stg
Storage Temperature
-55
+150
°C
T
leads
Lead Temperature
Max 5 Sec. Soldering
+270
°C
Table 5-2.
Thermal Characteristics (at 25°C)
Package
Symbol
Parameter
Value
Unit
PGA 132
θ
J-A
Thermal Resistance Ceramic Junction-to-ambient
TBD
°C/W
θ
J-C
Thermal Resistance Ceramic Junction-to-case
10
°C/W
CERQUAD 132
θ
J-A
Thermal Resistance Ceramic Junction-to-ambient
TBD
°C/W
θ
J-C
Thermal Resistance Ceramic Junction-to-case
10
°C/W


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