数据搜索系统,热门电子元器件搜索 |
|
SI4500BDY 数据表(PDF) 7 Page - Vishay Siliconix |
|
SI4500BDY 数据表(HTML) 7 Page - Vishay Siliconix |
7 / 9 page Document Number: 72281 S-61005-Rev. C, 12-Jun-06 www.vishay.com 7 Vishay Siliconix Si4500BDY P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.3 0.6 0.9 1.2 1.5 20 10 1 VSD - Source-to-Drain Voltage (V) TJ = 150 °C TJ = 25 °C - 0.2 - 0.1 0.0 0.1 0.2 0.3 0.4 - 50 - 25 0 25 50 75 100 125 150 TJ - Temperature (°C) ID = 250 µA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.00 0.04 0.08 0.12 0.16 0.20 0 1234 5 ID = 5.3 A VGS - Gate-to-Source Voltage (V) ID = 1 A 0 60 80 40 50 Time (sec) 1 600 70 0.1 0.001 0.01 10 100 30 20 10 Safe Operating Area VDS - Drain-to-Source Voltage (V) 100 1 0.1 1 10 100 0.01 10 TA = 25 °C Single Pulse P(t) = 10 dc 0.1 IDM Limited ID(on) Limited rDS(on) Limited BVDSS Limited P(t) = 1 P(t) = 0.1 P(t) = 0.01 P(t) = 0.0001 P(t) = 0.001 |
类似零件编号 - SI4500BDY |
|
类似说明 - SI4500BDY |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |