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TIP120, 121, 122, 125, 126, 127
Darlington Transistors
Page 1
30/05/05 V1.0
Features:
•• Designed for general-purpose amplifier and low speed switching applications.
•• Collector-Emitter sustaining voltage-VCEO(sus) = 60V (Minimum) - TIP120, TIP125
80V (Minimum) - TIP121, TIP126
100V (Minimum) - TIP122, TIP127.
•• Collector-Emitter saturation voltage-VCE(sat) = 2.0V (Maximum) at IC = 3.0A.
•• Monolithic construction with built-in-base-emitter shunt resistors.
Minimum
Maximum
A
14.68
15.31
B
9.78
10.42
C
5.01
6.52
D
13.06
14.62
E
3.57
4.07
F
2.42
3.66
G
1.12
1.36
H
0.72
0.96
I
4.22
4.98
J
1.14
1.38
K
2.20
2.97
L
0.33
0.55
M
2.48
2.98
O
3.70
3.90
Dimensions : Millimetres
Maximum Ratings
Characteristic
Symbol
TIP120
TIP121
TIP122
Unit
TIP125
TIP126
TIP127
Collector-Emitter Voltage
VCEO
60
80
100
V
Collector-Base Voltage
VCBO
Emitter-Base Voltage
VEBO
5.0
Collector Current -Continuous
-Peak
IC
ICM
5.0
8.0
A
Base Current
IB
120
mA
Total Power Dissipation at TC = 25°C
Derate above 25°C
PD
65
0.52
W
W/°C
Operating and Storage Junction
Temperature Range
TJ, TSTG
-65 to +150
°C
Thermal Characteristics
Characteristic
Symbol
Maximum
Unit
Thermal Resistance Junction to Case
R
θjc
1.92
°C/W
Pin 1. Base
2. Collector
3. Emitter
4. Collector (Case)
NPN
PNP
TIP120
TIP 125
TIP121
TIP 126
TIP122
TIP 127
5.0 Ampere
Darlington
Complementary Silicon
Power Transistors
60 - 100 Volts
65 Watts
TO-220