TIP121 datasheet(1/6 Pages) ETC2

部件名	TIP121

功能描述	Darlington Transistors

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制造商	ETC2 [List of Unclassifed Manufacturers]

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TIP120, 121, 122, 125, 126, 127

Darlington Transistors

Page 1

30/05/05 V1.0

Features:

•• Designed for general-purpose amplifier and low speed switching applications.

•• Collector-Emitter sustaining voltage-VCEO(sus) = 60V (Minimum) - TIP120, TIP125

80V (Minimum) - TIP121, TIP126

100V (Minimum) - TIP122, TIP127.

•• Collector-Emitter saturation voltage-VCE(sat) = 2.0V (Maximum) at IC = 3.0A.

•• Monolithic construction with built-in-base-emitter shunt resistors.

Minimum

Maximum

A

14.68

15.31

B

9.78

10.42

C

5.01

6.52

D

13.06

14.62

E

3.57

4.07

F

2.42

3.66

G

1.12

1.36

H

0.72

0.96

I

4.22

4.98

J

1.14

1.38

K

2.20

2.97

L

0.33

0.55

M

2.48

2.98

O

3.70

3.90

Dimensions : Millimetres

Maximum Ratings

Characteristic

Symbol

TIP120

TIP121

TIP122

Unit

TIP125

TIP126

TIP127

Collector-Emitter Voltage

VCEO

60

80

100

V

Collector-Base Voltage

VCBO

Emitter-Base Voltage

VEBO

5.0

Collector Current -Continuous

-Peak

IC

ICM

5.0

8.0

A

Base Current

IB

120

mA

Total Power Dissipation at TC = 25°C

Derate above 25°C

PD

65

0.52

W

W/°C

Operating and Storage Junction

Temperature Range

TJ, TSTG

-65 to +150

°C

Thermal Characteristics

Characteristic

Symbol

Maximum

Unit

Thermal Resistance Junction to Case

R

θjc

1.92

°C/W

Pin 1. Base

2. Collector

3. Emitter

4. Collector (Case)

NPN

PNP

TIP120

TIP 125

TIP121

TIP 126

TIP122

TIP 127

5.0 Ampere

Darlington

Complementary Silicon

Power Transistors

60 - 100 Volts

65 Watts

TO-220

类似零件编号 - TIP121

制造商	部件名	数据表	功能描述
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SemiHow Co.,Ltd.	TIP121	501Kb / 5P	Monolithic Construction With Built In Base-Emitter Shunt Resistors
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