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M40Z300W 数据表(PDF) 10 Page - STMicroelectronics |
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M40Z300W 数据表(HTML) 10 Page - STMicroelectronics |
10 / 16 page M40Z300, M40Z300W 10/16 VCC NOISE AND NEGATIVE GOING TRANSIENTS ICC transients, including those produced by output switching, can produce voltage fluctuations, re- sulting in spikes on the VCC bus. These transients can be reduced if capacitors are used to store en- ergy, which stabilizes the VCC bus. The energy stored in the bypass capacitors will be released as low going spikes are generated or energy will be absorbed when overshoots occur. A ceramic bypass capacitor value of 0.1µF (as shown in figure 8) is recommended in order to pro- vide the needed filtering. In addition to transients that are caused by normal SRAM operation, power cycling can generate neg- ative voltage spikes on VCC that drive it to values below VSS by as much as one volt. These negative spikes can cause data corruption in the SRAM while in battery backup mode. To protect from these voltage spikes, STMicroelectronics recom- mends connecting a schottky diode from VCC to VSS (cathode connected to VCC, anode to VSS). Schottky diode 1N5817 is recommended for through hole and MBRS120T3 is recommended for surface mount. Figure 7. Address-Decode Time Note: During system design, compliance with the SRAM timing parameters must comprehend the propagation delay between E and EXCON AI02551 A, B E E1CON-E4CON tAS tEDH or tEDL tEDL Figure 8. Supply Voltage Protection AI00622 VCC 0.1 µF DEVICE VCC VSS Table 8. Battery Table Part Number Description Package M4Z28-BR00SH Lithium Battery (48mAh) SNAPHAT SH M4Z32-BR00SH Lithium Battery (120mAh) SNAPHAT SH |
类似零件编号 - M40Z300W |
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类似说明 - M40Z300W |
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