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IRFBL12N50A 数据表(PDF) 2 Page - International Rectifier |
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IRFBL12N50A 数据表(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRFBL12N50A 2 www.irf.com Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 7.5 ––– ––– S VDS = 50V, ID = 7.8A Qg Total Gate Charge ––– ––– 64 ID = 13A Qgs Gate-to-Source Charge ––– ––– 17 nC VDS = 400V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 26 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 20 ––– VDD = 250V tr Rise Time ––– 53 ––– ID = 13A td(off) Turn-Off Delay Time ––– 43 ––– RG = 8.8Ω tf Fall Time ––– 42 ––– RD = 21Ω,See Fig. 10 Ciss Input Capacitance ––– 1900 ––– VGS = 0V Coss Output Capacitance ––– 290 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 12 ––– pF ƒ = 1.0MHz, See Fig. 5 Coss Output Capacitance ––– 2615 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 76 ––– VGS = 0V, VDS = 400V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 84 ––– VGS = 0V, VDS = 0V to 400V Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 500 ––– ––– V VGS = 0V, ID = 250µA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.45 Ω VGS = 10V, ID = 7.8A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA ––– ––– 25 µA VDS = 500V, VGS = 0V ––– ––– 250 VDS = 400V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -30V Static @ TJ = 25°C (unless otherwise specified) IGSS IDSS Drain-to-Source Leakage Current Dynamic @ TJ = 25°C (unless otherwise specified) ns Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 430 mJ IAR Avalanche Current ––– 13 A EAR Repetitive Avalanche Energy ––– 18 mJ Avalanche Characteristics S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 2.0 V TJ = 25°C, IS = 13A, VGS = 0V trr Reverse Recovery Time ––– 540 810 ns TJ = 25°C, IF = 13A Qrr Reverse RecoveryCharge ––– 4.1 6.1 µC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Diode Characteristics 13 52 A Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.70 °C/W RθJA Junction-to-Ambient (PCB Mounted,steady-state) ––– 40 |
类似零件编号 - IRFBL12N50A |
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类似说明 - IRFBL12N50A |
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