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SI2312BDS 数据表(PDF) 2 Page - Vishay Siliconix |
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SI2312BDS 数据表(HTML) 2 Page - Vishay Siliconix |
2 / 5 page www.vishay.com 2 Document Number: 73235 S-80642-Rev. B, 24-Mar-08 Vishay Siliconix Si2312BDS Notes: a. Pulse test: Pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted SPECIFICATIONS TA = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Limits Unit Min. Typ. Max. Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 µA 20 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.45 0.85 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 1 µA VDS = 20 V, VGS = 0 V, TJ = 70 °C 75 On-State Drain Currenta ID(on) VDS ≥ 10 V, VGS = 4.5 V 15 A Drain-Source On-Resistancea RDS(on) VGS = 4.5 V, ID = 5.0 A 0.025 0.031 Ω VGS = 2.5 V, ID = 4.6 A 0.030 0.037 VGS = 1.8 V, ID = 4.1 A 0.036 0.047 Forward Transconductancea gfs VDS = 15 V, ID = 5.0 A 30 S Diode Forward Voltage VSD IS = 1.0 A, VGS = 0 V 0.8 1.2 V Dynamicb Total Gate Charge Qg VDS = 10 V, VGS = 4.5 V, ID = 5.0 A 7.5 12 nC Gate-Source Charge Qgs 1.4 Gate-Drain Charge Qgd 1.2 Gate Resistance Rg f = 1.0 MHz 1.1 2.2 3.3 Ω Switching Turn-On Delay Time td(on) VDD = 10 V, RL = 10 Ω ID ≅ 1.0 A, VGEN = 4.5 V, Rg = 6 Ω 915 ns Rise Time tr 30 45 Turn-Off Delay Time td(off) 35 55 Fall Time tf 10 15 Source-Drain Reverse Recovery Time trr IF = 1.0 A, di/dt = 100 A/µs 13 25 Body Diode Reverse Recovery Charge Qrr 4.5 7 nC Output Characteristics 0 3 6 9 12 15 01 23 4 VGS = 4.5 thru 2.0 V 1.5 V VDS - Drain-to-Source Voltage (V) 1.0 V Transfer Characteristics 0 3 6 9 12 15 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 TC = 125 °C - 55 °C 25 °C VGS - Gate-to-Source Voltage (V) |
类似零件编号 - SI2312BDS |
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类似说明 - SI2312BDS |
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