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STD11NM60N-1 数据表(PDF) 1 Page - STMicroelectronics

部件名 STD11NM60N-1
功能描述  N-channel 600 V - 0.37 廓 - 10 A - TO-220 - TO-220FP- I2PAK - IPAK DPAK - D2PAK second generation MDmesh??Power MOSFET
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STD11NM60N-1 数据表(HTML) 1 Page - STMicroelectronics

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March 2008
Rev 4
1/21
21
STD11NM60N-1 - STB11NM60N/-1
STD11NM60N-STP11NM60N-STF11NM60N
N-channel 600 V - 0.37
Ω- 10 A - TO-220 - TO-220FP- I2PAK - IPAK
DPAK - D2PAK second generation MDmesh™ Power MOSFET
Features
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Application
Switching applications
Description
This series of devices is designed using the
second generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Figure 1.
Internal schematic diagram
Type
VDSS
(@TJmax)
RDS(on)
max
ID
STB11NM60N-1
STB11NM60N
STD11NM60N
STD11NM60N-1
STF11NM60N
STP11NM60N
650 V
650 V
650 V
650 V
650 V
650 V
0.45
0.45
0.45
0.45
0.45
0.45
10 A
10 A
10 A
10 A
10 A(1)
10 A
1.
Limited only by maximum temperature allowed
TO-220
TO-220FP
DPAK
IPAK
1
2
3
1
2
3
1
3
3
2
1
1
2
3
I²PAK
1
3
D²PAK
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STB11NM60N-1
B11NM60N
I²PAK
Tube
STB11NM60N
11NM60N
D²PAK
Tape and reel
STD11NM60N-1
D11NM60N
IPAK
Tube
STD11NM60N
D11NM60N
DPAK
Tape and reel
STP11NM60N
P11NM60N
TO-220
Tube
STF11NM60N
F11NM60N
TO-220FP
Tube
www.st.com


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