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STGW39NC60VD 数据表(PDF) 9 Page - STMicroelectronics |
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STGW39NC60VD 数据表(HTML) 9 Page - STMicroelectronics |
9 / 15 page STGW39NC60VD Electrical characteristics 9/15 2.2 Frequency applications For a fast IGBT suitable for high frequency applications, the typical collector current vs. maximum operating frequency curve is reported. That frequency is defined as follows: fMAX = (PD - PC) / (EON + EOFF) ● The maximum power dissipation is limited by maximum junction to case thermal resistance: Equation 1 PD = ∆T / RTHJ-C considering ∆T = TJ - TC = 125 °C - 75 °C = 50 °C ● The conduction losses are: Figure 14. Thermal impedance Figure 15. Turn-off SOA Figure 16. Emitter-collector diode characteristics Figure 17. IC vs. frequency 0 10 20 30 40 50 60 70 80 90 100 110 120 01 234 56 VFM(V) Tj=25°C (Maximum values) Tj=125°C (Maximum values) Tj=125°C (Maximum values) Tj=125°C (Typical values) Tj=125°C (Typical values) IFM(A) |
类似零件编号 - STGW39NC60VD |
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