STGW39NC60VD_08 datasheet(10/15 Pages) STMICROELECTRONICS

部件名	STGW39NC60VD

功能描述	40 A - 600 V - very fast IGBT

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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10 / 15 page

Electrical characteristics

STGW39NC60VD

10/15

Equation 2

PC = IC * VCE(SAT) * δ

with 50% of duty cycle, VCESAT typical value @125 °C.

●

Power dissipation during ON & OFF commutations is due to the switching frequency:

Equation 3

PSW = (EON + EOFF) * freq.

●

Typical values @ 125 °C for switching losses are used (test conditions: VCE = 390 V,

VGE = 15 V, RG = 10 Ω). Furthermore, diode recovery energy is included in the EON

(see note 2), while the tail of the collector current is included in the EOFF measurements

(see note 3).

类似零件编号 - STGW39NC60VD_08

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