TSI180B1 datasheet(7/9 Pages) STMICROELECTRONICS

部件名	TSI180B1

功能描述	TERMINAL SET INTERFACE PROTECTION AND DIODE BRIDGE

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

7 / 9 page

TSIxxB1

7/9

Type

IRM @VRM

VBO @IBO

IH

IBO

C

note1

note2

note1

note3

µAV

V

mA

pF

max.

min.

max.

typ.

TSI62B1

1

5

50

62

90

150

50

400

200

TSI180B1

1

5

50

180

250

150

50

400

200

TSI200B1

1

5

50

200

290

150

50

400

200

TSI220B1

1

5

50

220

330

150

50

400

200

TSI265B1

1

5

50

265

380

150

50

400

200

Note 1 : Measured at 50 Hz, one cycle

Note 2 : See test cricuit

Note 3 : VR = 0V, F = 1MHz, between pins 1 and 8.

ELECTRICAL CHARACTERISTICS (Tamb =25°C)

1 - PROTECTION DEVICES PARAMETERS

Symbol

Test condition

Value

Unit

VF

(for one diode)

IF =20mA

IF = 100 mA

0.9

1.1

V

2 - DIODE BRIDGE PARAMETERS

FUNCTIONAL HOLDING CURRENT (IH) TEST CIRCUIT : GO - NO GO TEST

This is a GO-NOGO Test which allows to confirm the holding current (IH) level in a functional

test circuit.

TEST PROCEDURE :

s

1) Adjust the current level at the IH value by short circuiting the D.U.T.

2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000

µs.

3) The D.U.T will come back off-state within a duration of 50 ms max.

R

-VP

VBAT =-48 V

Surge generator

D.U.T.

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