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LM3200 数据表(PDF) 10 Page - National Semiconductor (TI) |
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LM3200 数据表(HTML) 10 Page - National Semiconductor (TI) |
10 / 15 page Typical Performance Characteristics (Circuit in Figure 1,PV IN =VDD = EN = 3.6V, BYP = 0V, TA = 25˚C, unless otherwise noted) (Continued) R DSON vs Temperature (Bypass FET) Dropout Voltage vs Output Current (Bypass Mode) 20126134 20126141 Block Diagram 20126135 Operation Description The LM3200 is a simple, step-down DC-DC converter with a bypass switch, optimized for powering RF power amplifiers (PAs) in mobile phones, portable communicators, and similar battery powered RF devices. It is designed to allow the RF PA to operate at maximum efficiency over a wide range of power levels from a single Li-Ion battery cell. It is based on current-mode buck architecture, with synchronous rectifica- tion for high efficiency. It is designed for a maximum load capability of 300 mA in PWM mode and 500 mA in bypass mode. Maximum load range may vary from this depending on input voltage, output voltage and the inductor chosen. The device has three-pin selectable operating modes re- quired for powering RF PAs in mobile phones and other www.national.com 10 |
类似零件编号 - LM3200_05 |
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类似说明 - LM3200_05 |
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