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KSE800 数据表(PDF) 2 Page - Fairchild Semiconductor

部件名 KSE800
功能描述  Monolithic Construction With Built-in Base-Emitter Resistors
Download  4 Pages
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制造商  FAIRCHILD [Fairchild Semiconductor]
网页  http://www.fairchildsemi.com
标志 FAIRCHILD - Fairchild Semiconductor

KSE800 数据表(HTML) 2 Page - Fairchild Semiconductor

  KSE800 Datasheet HTML 1Page - Fairchild Semiconductor KSE800 Datasheet HTML 2Page - Fairchild Semiconductor KSE800 Datasheet HTML 3Page - Fairchild Semiconductor KSE800 Datasheet HTML 4Page - Fairchild Semiconductor  
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©2001 Fairchild Semiconductor Corporation
Rev. A3, June 2001
Typical Characteristics
Figure 1. Static Characteristic
Figure 2. DC current Gain
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
Figure 5. Safe Operating Area
Figure 6. Power Derating
0
1234
5
0
1
2
3
4
5
IB= 350
µA
IB= 400
µA
IB= 450
µA
IB= 500µ
A
IB= 300µA
IB= 250µA
IB= 200µA
IB= 150
µA
IB= 100
µA
IB= 50
µA
VCE(V),COLLECTOR-EMITTER VOLTAGE
0.01
0.1
1
10
10
100
1000
10000
VCE = 3V
IC[A], COLLECTOR CURRENT
0.01
0.1
1
10
0.1
1
10
100
IC = 500 IB
VCE(sat)
VBE(sat)
IC[A], COLLECTOR CURRENT
0.01
0.1
1
10
100
1
10
100
1000
f=0.1MHZ
IE=0
VCB[V], COLLECTOR-BASE VOLTAGE
1
10
100
1000
0.1
1
10
100
KSE802/803
KSE800/801
VCE[V], COLLECTOR-EMITTER VOLTAGE
0
25
50
75
100
125
150
175
0
10
20
30
40
50
60
TC[
o
C], CASE TEMPERATURE


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