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数据搜索系统，热门电子元器件搜索 |
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BCW66F 数据表(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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BCW66F 数据表(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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2 / 4 page  BL Galaxy Electrical Production specification NPN General Purpose Amplifier BCW65/66 Document number: BL/SSSTC106 www.galaxycn.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage BCW65 BCW66 V(BR)CBO IC=10μA IE=0 60 75 V Collector-emitter breakdown voltage BCW65 BCW66 V(BR)CEO IC=10mA IB=0 B 32 45 V Emitter-base breakdown voltage V(BR)EBO IE=10μA IC=0 5 V Collector cut-off current BCW65 BCW66 ICBO VCB=32V IE=0 VCB=45V IE=0 20 20 nA Emitter cut-off current IEBO VEB=4V IC=0 20 nA DC current gain A/F B/G C/H hFE VCE=5V IC=2mA 100 160 250 250 400 630 Collector-emitter saturation voltage VCE(sat) IC=100mA IB=10mA B IC=500mA IB=50mA B 0.3 0.7 V Base-emitter saturation voltage VBE(sat) IC=100mA IB=10mA B IC=500mA IB=50mA B 1.25 2 V Transition frequency fT VCE=5V IC=50mA f=20MHz 170 MHz TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified |
类似零件编号 - BCW66F |
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类似说明 - BCW66F |
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