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SPI47N10L 数据表(PDF) 3 Page - Infineon Technologies AG |
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SPI47N10L 数据表(HTML) 3 Page - Infineon Technologies AG |
3 / 8 page 2002-01-09 Page 3 Preliminary data SPI47N10L SPP47N10L,SPB47N10L Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs VDS2*ID*RDS(on)max , ID=33A 18 36 - S Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 2000 2500 pF Output capacitance Coss - 375 470 Reverse transfer capacitance Crss - 210 265 Turn-on delay time td(on) VDD=50V, VGS=4.5V, ID=47A, RG=2 - 50 75 ns Rise time tr - 100 150 Turn-off delay time td(off) - 50 75 Fall time tf - 70 105 Gate Charge Characteristics Gate to source charge Qgs VDD=80V, ID=47A - 8 12 nC Gate to drain charge Qgd - 16 24 Gate charge total Qg VDD=80V, ID=47A, VGS=0 to 10V - 90 135 Gate plateau voltage V(plateau) VDD=80V, ID=47A - 3.38 - V Reverse Diode Inverse diode continuous forward current IS TC=25°C - - 47 A Inverse diode direct current, pulsed ISM - - 188 Inverse diode forward voltage VSD VGS=0V, IF=94A - 1.1 1.5 V Reverse recovery time trr VR=50V, IF=lS, diF/dt=100A/µs - 80 120 ns Reverse recovery charge Qrr - 340 510 nC |
类似零件编号 - SPI47N10L |
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类似说明 - SPI47N10L |
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